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| Collector-Emitter Voltage (RBE
= Infinity), VCEO |
17V |
| Collector-Base Voltage, VCBO |
35V |
| Emitter-Base Voltage, VEBO |
4V |
| Collector Current, IC |
0,6A |
| Collector Power Dissipation (TA
= +25°C), PD |
1W |
| Collector Power Dissipation (TC
= +50°C), PD |
5W |
| Operating Junction Temperature, TJ |
+150°C |
| Storage Temperature Range, Tstg |
-55° to +150°C |
| Thermal Resistance, Junction-to-Case,
RthJC |
25°C/W |
| Thermal Resistance,
Junction-to-Ambient, RthJA |
125#176;C/W |
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| Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
| Collector-Base Breakdown
Voltage |
V(BR)CBO |
IC = 5mA, IE
= 0 |
40 |
- |
- |
V |
| Collector-Emitter Breakdown
Voltage |
V(BR)CEO |
IC = 50mA, RBE
= Infinity |
17 |
- |
- |
V |
| Emitter-Base Breakdown
Voltage |
V(BR)EBO |
IE = 1mA, IC
= 0 |
4 |
- |
- |
V |
| Collector Cutoff Current |
ICBO |
VCB = 25V IE
= 0 |
- |
- |
100 |
µA |
| Emitter Cutoff Current |
IEBO |
VEB = 3V, IC
= 0 |
- |
- |
100 |
µA |
| DC Forward Current Gain |
hFE |
VCE = 10V, IC
= 100mA, Note 1 |
10 |
50 |
180 |
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| Power Output |
PO |
VCC
= 13.5V, Pin = 600mW, f = 175MHz |
1 |
1,2 |
- |
W |
| Collector Efficiency |
|
50 |
60 |
- |
% |
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