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| Collector-Emitter Voltage (RBE
= Infinity), VCEO |
25V |
| Collector-Base Voltage, VCBO |
60V |
| Emitter-Base Voltage, VEBO |
5V |
| Collector Current, IC |
6A |
| Collector Power Dissipation (TA
= +25°C), PD |
1.7W |
| Collector Power Dissipation (TC
= +50°C), PD |
20W |
| Operating Junction Temperature, TJ |
+150°C |
| Storage Temperature Range, Tstg |
-55° to +150°C |
| Thermal Resistance, Junction-to-Case, RthJC |
6.25°C/W |
| Thermal Resistance, Junction-to-Ambient,
RthJA |
73.5°C/W |
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| Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
| Collector-Base Breakdown
Voltage |
V(BR)CBO |
IC = 1mA, IE
= 0 |
60 |
- |
- |
V |
| Collector-Emitter Breakdown
Voltage |
V(BR)CEO |
IC = 10mA, RBE
= Infinity |
25 |
- |
- |
V |
| Emitter-Base Breakdown
Voltage |
V(BR)EBO |
IE = 5mA, IC
= 0 |
5 |
- |
- |
V |
| Collector Cutoff Current |
ICBO |
VCB = 30V IE
= 0 |
- |
- |
100 |
µA |
| Emitter Cutoff Current |
IEBO |
VEB = 4V, IC
= 0 |
- |
- |
100 |
µA |
| DC Forward Current Gain |
hFE |
VCE = 12V, IC
= 10mA, Note 1 |
10 |
50 |
180 |
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| Power Output |
PO |
VCC
= 12V, Pin = 1W, f = 27MHz |
16 |
18 |
- |
W |
| Collector Efficiency |
|
60 |
70 |
- |
% |
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